(Dr. Peter Hesketh, advisor)
"Process development for a Silicon Carbide Micro-Four Point Probe"
With semiconductor and sensor device sizes decreasing rapidly, means of characterization of these devices require new methods to measure devices on comparable dimensions. Atomic force microscopy possesses the ability to work on these scales and can thus act as a powerful platform for characterization of submicron devices.
This work aims at development of novel fabrication methods for a micro-scale four-point probe to be used on an atomic force microscope (AFM) to allow for electrical characterization of semiconductor and sensor devices. A van der Pauw type square-contact measurement scheme is used. Concerns such as cantilever tip wear and tip conductivity have been addressed by use of doped silicon carbide as structural material of the cantilever. The device developed is fabricated in part using MEMS fabrication techniques and in part using stereolithography. To that end a method of integration of stereolithographic structures into MEMS devices with high alignment accuracy is also presented.